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BGA2714
MMIC wideband amplifier
Rev. 01 -- 24 May 2007 Product data sheet
1. Product profile
1.1 General description
Silicon Monolitic Microwave Integrated Circuit (MMIC) wideband amplifier with internal matching circuit in a 6-pin SOT363 plastic SMD package.
Table 1. Typical performance Tamb = 25 C; measured on demo board; typical values. f (MHz) 250 950 2150 VSUP (V) 3.0 3.0 3.0 ISUP (mA) 4.58 4.58 4.58 Gp (dB) 20.7 20.4 20.8 NF (dB) 2.4 2.2 3.0 PL(1dB) (dBm) -7.8 -7.9 -9.0 PL(sat) (dBm) -2.4 -3.4 -4.7 IP3O (dBm) 4.3 2.1 0.0
CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.
1.2 Features
I I I I I I I I Internally matched to 50 Wide frequency range (2.7 GHz at 3 dB gain bandwidth) Flat 21 dB gain ( 1 dB from DC up to 2500 MHz) Very low current (4.6 mA) at low supply voltage of 3 V Very good reverse isolation (> 50 dB up to 2 GHz) Good linearity with low second order and third order products Low noise (NF = 2.2 dB at 1 GHz) Unconditionally stable (K > 5)
1.3 Applications
I LNB IF amplifiers I General purpose low noise wideband amplifier for frequencies between DC and 2.7 GHz
NXP Semiconductors
BGA2714
MMIC wideband amplifier
2. Pinning information
Table 2. Pin 1 2, 5 3 4 6 Pinning Description VSUP GND2 RF_OUT GND1 RF_IN
1 2 3 6 5 4 6 4 2, 5
sym052
Simplified outline
Symbol
1 3
3. Ordering information
Table 3. Ordering information Package Name BGA2714 Description plastic surface-mounted package; 6 leads Version SOT363 Type number
4. Marking
Table 4. BGA2714 Marking Marking code BAType number
5. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VSUP ISUP Ptot Tstg Tj Pdrive Parameter supply voltage supply current total power dissipation storage temperature junction temperature drive power Tsp = 90 C Conditions RF input AC coupled Min -65 Max 4 10 200 +150 150 -20 Unit V mA mW C C dBm
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Product data sheet
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MMIC wideband amplifier
6. Thermal characteristics
Table 6. Symbol Rth(j-sp) Thermal characteristics Parameter Conditions Typ 300 Unit K/W thermal resistance from junction to Ptot = 200 mW; Tsp = 90 C solder point
7. Characteristics
Table 7. Characteristics VSUP = 3 V; ISUP = 4.58 mA; Tamb = 25 C; measured on demo board; unless otherwise specified. Symbol Parameter ISUP Gp supply current power gain f = 100 MHz f = 250 MHz f = 950 MHz f = 2150 MHz f = 2500 MHz f = 3000 MHz RLin input return loss f = 250 MHz f = 950 MHz f = 2150 MHz RLout output return loss f = 250 MHz f = 950 MHz f = 2150 MHz ISL isolation f = 250 MHz f = 950 MHz f = 2150 MHz NF noise figure f = 250 MHz f = 950 MHz f = 2150 MHz B-3dB K -3 dB bandwidth Rollet stability factor 3 dB below gain at 1 GHz f = 250 MHz f = 950 MHz f = 2150 MHz PL(sat) saturated output power f = 250 MHz f = 950 MHz f = 2150 MHz PL(1dB) output power at 1 dB gain compression f = 250 MHz f = 950 MHz f = 2150 MHz Conditions Min 3.7 20 20 20 20 19 16 11 7 12 10 10 8 55 55 45 25 35 7 -3 -4 -6 -8.5 -8.7 -10 Typ 4.58 20.8 20.7 20.4 20.8 19.5 16.8 13.9 8.9 15.9 10.6 10.8 9.8 58 59 49 2.4 2.2 3.0 2.7 30 47 10 -2.4 -3.4 -4.7 -7.8 -7.9 -9 Max Unit 5.7 21 21 21 22 21 18 2.5 2.3 3.2 dBm dBm dBm dBm dBm dBm mA dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB GHz
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Product data sheet
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BGA2714
MMIC wideband amplifier
Table 7. Characteristics ...continued VSUP = 3 V; ISUP = 4.58 mA; Tamb = 25 C; measured on demo board; unless otherwise specified. Symbol Parameter IP3I input third-order intercept point Conditions f = 250 MHz f = 950 MHz f = 2150 MHz IP3O output third-order intercept point f = 250 MHz f = 950 MHz f = 2150 MHz PL(2H) second harmonic output power f1H = 250 MHz; f2H = 500 MHz; Pdrive = -40 dBm f1H = 950 MHz; f2H = 1900 MHz; Pdrive = -40 dBm IM2 second-order intermodulation distance f1 = 250 MHz; f2 = 251 MHz; Pdrive = -40 dBm f1 = 950 MHz; f2 = 951 MHz; Pdrive = -40 dBm Min Typ Max Unit dBm dBm dBm dBm dBm dBm dBm -17.4 -16.4 -19.1 -18.3 -21.8 -20.8 3.3 1.3 -1.0 -62 4.3 2.1 0 -64 -
-58
-60
-
dBm
-36
-38
-
dBc
-31
-33
-
dBc
8. Application information
Figure 1 shows a typical application circuit for the BGA2714 MMIC. The device is internally matched to 50 , and therefore does not need any external matching. The value of the input and output DC blocking capacitors C2 and C3 should not be more than 100 pF for applications above 100 MHz. However, when the device is operated below 100 MHz, the capacitor value should be increased. The 22 nF supply decoupling capacitor C1 should be located as close as possible to the MMIC. The PCB top ground plane, connected to pins 2, 4 and 5 must be as close as possible to the MMIC, preferably also below the MMIC. When using via holes, use multiple via holes as close as possible to the MMIC.
VS
C1
VS RF_IN RF_OUT C3
C2
RF input
RF output
GND1
GND2
001aaf761
Fig 1. Typical application circuit
BGA2714_1
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Product data sheet
Rev. 01 -- 24 May 2007
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NXP Semiconductors
BGA2714
MMIC wideband amplifier
8.1 Application examples
wideband amplifier to IF circuit or demodulator antenna wideband amplifier
mixer from RF circuit
LNA
mixer to IF circuit or demodulator
oscillator
oscillator
001aaf762 001aaf763
The MMIC is very suitable as IF amplifier in e.g. LNB's. The excellent wideband characteristics make it an easy building block.
As second amplifier after an LNA, the MMIC offers an easy matching, low noise solution.
Fig 2. Application as IF amplifier
Fig 3. Application as RF amplifier
8.2 Graphs
90 +1 135 +0.5 +2 45 1.0 0.8 0.6 0.4 0.2 5 10 0 0
+0.2 100 MHz 2
+5
180
0
0.2
0.5 3 GHz
1
-0.2
-5
-135
-0.5 -1 -90
-2
-45 1.0
001aaf764
Tamb = 25 C; ISUP = 4.58 mA; VSUP = 3 V; Pdrive = -40 dBm; Z0 = 50 .
Fig 4. Input reflection coefficient (S11); typical values
BGA2714_1
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Product data sheet
Rev. 01 -- 24 May 2007
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BGA2714
MMIC wideband amplifier
90 +1 135 +0.5 +2 45 1.0 0.8 0.6 0.4 0.2 180 0 0.2 0.5 1 3 GHz 2 100 MHz 5 10 0 0
+0.2
+5
-0.2
-5
-135
-0.5 -1 -90
-2
-45 1.0
001aaf765
Tamb = 25 C; ISUP = 4.58 mA; VSUP = 3 V; Pdrive = -40 dBm; Z0 = 50 .
Fig 5. Output reflection coefficient (S22); typical values
30 Gp (dB) 20
001aaf766
30 Gp (dB) 20
001aaf767
(1) (2) (3)
(1) (2) (3)
10
10
0 0 1000 2000 f (MHz) 3000
0 0 1000 2000 f (MHz) 3000
Tamb = 25 C; Pdrive = -40 dBm; Z0 = 50 . (1) VSUP = 3.3 V; ISUP = 4.96 mA. (2) VSUP = 3.0 V; ISUP = 4.58 mA. (3) VSUP = 2.7 V; ISUP = 4.16 mA.
VSUP = 3 V; Pdrive = -40 dBm; Z0 = 50 . (1) Tamb = -40 C; ISUP = 5.01 mA. (2) Tamb = +25 C; ISUP = 4.58 mA. (3) Tamb = +85 C; ISUP = 4.22 mA.
Fig 6. Insertion power gain as function of frequency; typical values
Fig 7. Insertion power gain as function of frequency; typical values
BGA2714_1
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Product data sheet
Rev. 01 -- 24 May 2007
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NXP Semiconductors
BGA2714
MMIC wideband amplifier
0 ISL (dB) -20
001aaf768
102 K
001aaf769
10
-40
1 -60
-80 0 1000 2000 f (MHz) 3000
10-1 0 1000 2000 3000 f (MHz) 4000
Tamb = 25 C; ISUP = 4.58 mA; VSUP = 3 V; Pdrive = -40 dBm; Z0 = 50 .
Tamb = 25 C; ISUP = 4.58 mA; VSUP = 3 V; Z0 = 50 .
Fig 8. Isolation as function of frequency; typical values
5 NF (dB) 4
001aaf770
Fig 9. Rollet stability factor as function of frequency; typical values
5 NF (dB) 4
001aaf771
3
(1) (2)
3
(1)
(2)
2
(3)
2
(3)
1 0 1000 2000 f (MHz) 3000
1 0 1000 2000 f (MHz) 3000
Tamb = 25 C; Z0 = 50 . (1) VSUP = 3.3 V; ISUP = 4.96 mA. (2) VSUP = 3.0 V; ISUP = 4.58 mA. (3) VSUP = 2.7 V; ISUP = 4.16 mA.
VSUP = 3 V; Z0 = 50 . (1) Tamb = -40 C; ISUP = 5.01 mA. (2) Tamb = +25 C; ISUP = 4.58 mA. (3) Tamb = +85 C; ISUP = 4.22 mA.
Fig 10. Noise figure as function of frequency
Fig 11. Noise figure as function of frequency
BGA2714_1
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Product data sheet
Rev. 01 -- 24 May 2007
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NXP Semiconductors
BGA2714
MMIC wideband amplifier
0 PL (dBm) -10
001aaf772
0 PL (dBm) -10
001aaf773
(1) (2) (3)
(1) (2) (3)
-20
-20
-30 -45
-35
-25 Pi (dBm)
-15
-30 -45
-35
-25 Pi (dBm)
-15
Tamb = 25 C; f = 250 MHz; Z0 = 50 . (1) VSUP = 3.3 V. (2) VSUP = 3.0 V. (3) VSUP = 2.7 V.
Tamb = 25 C; f = 950 MHz; Z0 = 50 . (1) VSUP = 3.3 V. (2) VSUP = 3.0 V. (3) VSUP = 2.7 V.
Fig 12. Output power as function of input power at 250 MHz; typical values
0 PL (dBm) -10
001aaf774
Fig 13. Output power as function of input power at 950 MHz; typical values
0 PL, IMD3 (dBm) -30 PL
(1) (2) (3)
001aaf775
(1) (2) (3)
(1) (2) (3)
-20
-60
IMD3 -30 -45 -35 -25 Pi (dBm) -15 -90 -50 -40 -30 Pi (dBm) -20
Tamb = 25 C; f = 2150 MHz; Z0 = 50 . (1) VSUP = 3.3 V. (2) VSUP = 3.0 V. (3) VSUP = 2.7 V.
Tamb = 25 C; f1 = 250 MHz; f2 = 251 MHz; Z0 = 50 . (1) VSUP = 3.3 V. (2) VSUP = 3.0 V. (3) VSUP = 2.7 V.
Fig 14. Output power as function of input power at 2150 MHz; typical values
Fig 15. Output power and third order intermodulation as functions of input power around 250 MHz; typical values
BGA2714_1
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 -- 24 May 2007
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NXP Semiconductors
BGA2714
MMIC wideband amplifier
0 PL, IMD3 (dBm) -30 PL
(1) (2) (3)
001aaf776
0 PL, IMD3 (dBm) -30 PL
(1) (2) (3) (1) (2) (3)
001aaf777
(1) (2) (3)
-60
-60 IMD3 IMD3
-90 -50
-40
-30 Pi (dBm)
-20
-90 -50
-40
-30 Pi (dBm)
-20
Tamb = 25 C; f1 = 950 MHz; f2 = 951 MHz; Z0 = 50 . (1) VSUP = 3.3 V. (2) VSUP = 3.0 V. (3) VSUP = 2.7 V.
Tamb = 25 C; f1 = 2150 MHz; f2 = 2151 MHz; Z0 = 50 . (1) VSUP = 3.3 V. (2) VSUP = 3.0 V. (3) VSUP = 2.7 V.
Fig 16. Output power and third order intermodulation as functions of input power around 950 MHz; typical values
Fig 17. Output power and third order intermodulation as functions of input power around 2150 MHz; typical values
0 IM2 (dBc) -10
001aaf778
-20
-30
(1)
(2)
-40 -45
-40
-35
-30 Pi (dBm)
-25
Tamb = 25 C; ISUP = 4.58 mA; VSUP = 3 V; Z0 = 50 . (1) f1 = 950 MHz; f2 = 951 MHz. (2) f1 = 250 MHz; f2 = 251 MHz.
Fig 18. Second-order intermodulation distance as function of input power; typical values
BGA2714_1
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Product data sheet
Rev. 01 -- 24 May 2007
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NXP Semiconductors
BGA2714
MMIC wideband amplifier
8.3 Scattering parameters
Table 8. Scattering parameters ISUP = 4.58 mA; VSUP = 3 V; Pdrive = -40 dBm; Z0 = 50 ; Tamb = 25 C; measured on demo board. f (MHz) S11 Magnitude (ratio) 100 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 0.155 0.170 0.280 0.346 0.365 0.360 0.335 0.305 0.255 0.246 0.197 0.153 0.121 0.081 0.066 0.019 Angle (deg) 33.5 26.5 -2.2 -30.4 -62.7 -91.4 -124.9 -156.3 167.0 139.2 83.5 54.8 1.7 -24.9 -93.6 144.4 S21 Magnitude (ratio) 10.88 10.84 10.69 10.54 10.46 10.42 10.72 10.90 10.94 11.22 10.95 10.71 9.87 9.09 7.74 6.77 Angle (deg) -10.9 -20.2 -43.8 -64.1 -85.9 -106.3 -127.4 -148.7 -172.9 166.3 140.2 115.3 87.3 63.3 36.6 20.5 S12 Magnitude (ratio) 0.00364 0.00183 0.00077 0.00057 0.00111 0.00129 0.00091 0.00118 0.00090 0.00155 0.00276 0.00453 0.00700 0.00933 0.01119 0.01228 Angle (deg) -155.2 -21.9 -25.5 122.0 115.1 80.2 -54.8 -55.9 157.0 7.1 133.2 63.4 31.8 51.9 24.8 14.1 S22 Magnitude (ratio) 0.313 0.294 0.396 0.293 0.291 0.289 0.315 0.304 0.310 0.343 0.335 0.327 0.310 0.293 0.266 0.203 Angle (deg) -14.2 -19.2 -36.4 -54.9 -74.4 -94.8 -119.5 -140.2 -167.3 172.3 129.3 101.6 66.2 45.0 5.8 -6.6 11.2 22.3 50.7 66.9 11.2 29.7 40.7 31.9 43.0 23.9 14.1 9.0 6.5 5.4 5.4 5.8 K
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Product data sheet
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MMIC wideband amplifier
9. Test information
30 mm
IC1 30 mm C1
C2
IN
OUT
IN
L1 C3
OUT
V+
V+
001aaf779
True size = 30 mm x 30 mm.
Fig 19. PCB layout and demo board with components Table 9. C1, C2 C3 IC1 L1 List of components used for the typical application Description multilayer ceramic chip capacitor multilayer ceramic chip capacitor BGA2714 MMIC not used Value 100 pF 22 nF Dimensions 0603 0603 SOT363
Component
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Product data sheet
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BGA2714
MMIC wideband amplifier
10. Package outline
Plastic surface-mounted package; 6 leads SOT363
D
B
E
A
X
y
HE
vMA
6
5
4
Q
pin 1 index
A
A1
1
e1 e
2
bp
3
wM B detail X Lp
c
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max 0.1 bp 0.30 0.20 c 0.25 0.10 D 2.2 1.8 E 1.35 1.15 e 1.3 e1 0.65 HE 2.2 2.0 Lp 0.45 0.15 Q 0.25 0.15 v 0.2 w 0.2 y 0.1
OUTLINE VERSION SOT363
REFERENCES IEC JEDEC JEITA SC-88
EUROPEAN PROJECTION
ISSUE DATE 04-11-08 06-03-16
Fig 20. Package outline SOT363
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Product data sheet
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BGA2714
MMIC wideband amplifier
11. Abbreviations
Table 10. Acronym DC IF LNA LNB PCB RF Abbreviations Description Direct Current Intermediate Frequency Low-Noise Amplifier Low-Noise Block converter Printed-Circuit Board Radio Frequency
12. Revision history
Table 11. Revision history Release date 20070524 Data sheet status Product data sheet Change notice Supersedes Document ID BGA2714_1
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Product data sheet
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MMIC wideband amplifier
13. Legal information
13.1 Data sheet status
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Product status[3] Development Qualification Production
Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
malfunction of a NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.
13.3 Disclaimers
General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
14. Contact information
For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: salesaddresses@nxp.com
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Product data sheet
Rev. 01 -- 24 May 2007
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MMIC wideband amplifier
15. Contents
1 1.1 1.2 1.3 2 3 4 5 6 7 8 8.1 8.2 8.3 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 4 Application examples . . . . . . . . . . . . . . . . . . . . 5 Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Scattering parameters . . . . . . . . . . . . . . . . . . 10 Test information . . . . . . . . . . . . . . . . . . . . . . . . 11 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 12 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 14 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Contact information. . . . . . . . . . . . . . . . . . . . . 14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2007.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 24 May 2007 Document identifier: BGA2714_1

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